29 June 2001 UV-FEL photoelectron emission microscopy of the dynamics of nanostructures on silicon surfaces
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Abstract
The combination of a wavelength tunable UV free electron laser and a high resolution photo-electron emission microscope offers unprecedented opportunities for in situ, real time imaging of the dynamics of processes on surfaces on a nanometer scale. This type of system is now in operation at the Duke University Free Electron Laser Laboratory. In this study we report real time observations of the dynamics of liquid Pt-Si islands on Si(100) surfaces. The dynamics of coalescence is observed. Moreover, a driving force for motion of the liquid micro-droplets is developed based on these observations. We also report studies of the dynamics of growth of nanometer scale TiSi2 islands on Si(111). Depending on the growth conditions, we observe ripening or coalescence processes where smaller islands evolve into larger islands. On the (111) surface a shape transition is observed in which the islands are initially circular and then develop into long wire shaped structures. The growth processes represent a competition between kinetic and energetic processes on the surfaces.
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Woochul Yang, Woochul Yang, Harald Ade, Harald Ade, Robert J. Nemanich, Robert J. Nemanich, } "UV-FEL photoelectron emission microscopy of the dynamics of nanostructures on silicon surfaces", Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); doi: 10.1117/12.432507; https://doi.org/10.1117/12.432507
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