15 May 2001 InGaAs/InGaAsP diffused quantum wells optical amplifiers and modulators
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Proceedings Volume 4277, Integrated Optics Devices V; (2001); doi: 10.1117/12.426830
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Diffused quantum wells (DFQW) optical devices have been widely investigated for use in optical electronics integrated circuits. In this paper, we report on the performance of five-period DFQW optical amplifiers and modulators. The result show that the QW amplifiers and modulators maintain at single guiding mode operation after the QW structure has been annealed. The running range of the operation l wavelength of QW optical amplifiers is 34 meV without a significant degradation in the modal gain peak by interdiffusing the QWs. The QW interdiffusion was accomplished by P+ ion implantation to the upper region of the top cladding layer of the multilayer structure and followed by rapid thermal annealing such that the implanted ions did not damage the QW structures. The I-V characteristics of the implanted QW are similar to that of the unimplanted. Concerning the TE electro-absorptive modulation, a large contrast ratio of 35dB can be obtained at (lambda) op equals 1.55 micrometers under a small bias of -1.5V fora 500 micrometers long modulator. For TM mode, a slightly higher CR Of 37dB can be obtained at the operation wavelength although the reverse bias voltage is double.
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Wallace C. H. Choy, Jian Jun He, Ming Li, Yan Feng, Emil S. Koteles, "InGaAs/InGaAsP diffused quantum wells optical amplifiers and modulators", Proc. SPIE 4277, Integrated Optics Devices V, (15 May 2001); doi: 10.1117/12.426830; https://doi.org/10.1117/12.426830
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KEYWORDS
Quantum wells

Optical amplifiers

Modulators

Chromium

Absorption

Ion implantation

Modulation

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