15 May 2001 New integrated optical memory based on the plasma wave modulator/switch
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Proceedings Volume 4277, Integrated Optics Devices V; (2001) https://doi.org/10.1117/12.426809
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
The feasibility of an integrated optical memory is explored. This memory cell is based on the plasma wave modulator/switch, which has a horizontal layered structure. A transverse voltage maintains a bias for the structure and can be used for electrical write cycle. The cell content is then read by a propagating guided optical wave across the structure. It is also possible to apply full optical read/write/clear cycles as discussed. The read cycle can be either destructive or non-destructive, depending on the wavelength. A modification of this device may be considered as an opto-transistor, in which an optical signal controls the flow of another optical beam.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sina Khorasani, Sina Khorasani, Alireza Nojeh, Alireza Nojeh, Bizhan Rashidian, Bizhan Rashidian, } "New integrated optical memory based on the plasma wave modulator/switch", Proc. SPIE 4277, Integrated Optics Devices V, (15 May 2001); doi: 10.1117/12.426809; https://doi.org/10.1117/12.426809


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