880-nm surface-emitting microcavity light-emitting diode

Daniel Ochoa; Ross P. Stanley; Romuald Houdre; Marc Ilegems; Christian Hanke; Bernd Borchert

doi:10.1117/12.426835

14 May 2001 880-nm surface-emitting microcavity light-emitting diode

Daniel Ochoa, Ross P. Stanley, Romuald Houdre, Marc Ilegems, Christian Hanke, Bernd Borchert

Proceedings Volume 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V; (2001) https://doi.org/10.1117/12.426835
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Microcavity light emitting diodes (MCLEDs) are planar emitting devices that can achieve large brightness increase compare to conventional LEDs. We designed and fabricated a GaAs/Al_xGa_1-xAs surface-emitting MCLED emitting at 880 nm. Two InGaAs quantum wells are included in a (lambda) -Al_0.3Ga_0.7As cavity between two Al_0.1Ga_0.9As/Al_0.8Ga_0.2As Bragg mirrors. The top n-doped Bragg mirror has 4 pairs, the bottom one is p-doped like the substrate and has 20 pairs. The detuning between the source emission wavelength and the Fabry Perot wavelength is -20 nm. It is optimum for an extraction into air. By inserting the bonded MCLED device into an integration sphere we measured a maximum external quantum efficiency of 14% at 10 mA. An epoxy lens is placed on top of the device and the external quantum efficiency is increased up to 20.5% at 10 mA. These values are in good agreement with theoretical calculations if the internal quantum efficiency of the structure is equal to 85%. Additional calculations and measurements are performed and lead to a good physical understanding of the MCLED.

Citation Download Citation

Daniel Ochoa, Ross P. Stanley, Romuald Houdre, Marc Ilegems, Christian Hanke, and Bernd Borchert "880-nm surface-emitting microcavity light-emitting diode", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); https://doi.org/10.1117/12.426835

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