14 May 2001 880-nm surface-emitting microcavity light-emitting diode
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Abstract
Microcavity light emitting diodes (MCLEDs) are planar emitting devices that can achieve large brightness increase compare to conventional LEDs. We designed and fabricated a GaAs/AlxGa1-xAs surface-emitting MCLED emitting at 880 nm. Two InGaAs quantum wells are included in a (lambda) -Al0.3Ga0.7As cavity between two Al0.1Ga0.9As/Al0.8Ga0.2As Bragg mirrors. The top n-doped Bragg mirror has 4 pairs, the bottom one is p-doped like the substrate and has 20 pairs. The detuning between the source emission wavelength and the Fabry Perot wavelength is -20 nm. It is optimum for an extraction into air. By inserting the bonded MCLED device into an integration sphere we measured a maximum external quantum efficiency of 14% at 10 mA. An epoxy lens is placed on top of the device and the external quantum efficiency is increased up to 20.5% at 10 mA. These values are in good agreement with theoretical calculations if the internal quantum efficiency of the structure is equal to 85%. Additional calculations and measurements are performed and lead to a good physical understanding of the MCLED.
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Daniel Ochoa, Ross P. Stanley, Romuald Houdre, Marc Ilegems, Christian Hanke, Bernd Borchert, "880-nm surface-emitting microcavity light-emitting diode", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426835; https://doi.org/10.1117/12.426835
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