14 May 2001 GaN-based multiple quantum well light-emitting devices
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The GaN-based multiple quantum wells (MQW) laser diodes have been improved excellently by introducing GaN/GaInN optical- guiding layers and by reducing dislocation density. The lifetime of continuous wave operation has been improved to longer than 300 hours with 3 mW at the wavelength of 409 nm.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masayoshi Koike, Masayoshi Koike, Sho Iwayama, Sho Iwayama, Shiro Yamasaki, Shiro Yamasaki, Yuta Tezen, Yuta Tezen, Seiji Nagai, Seiji Nagai, Akira Kojima, Akira Kojima, } "GaN-based multiple quantum well light-emitting devices", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426840; https://doi.org/10.1117/12.426840

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