14 May 2001 GaN-based multiple quantum well light-emitting devices
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Proceedings Volume 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V; (2001); doi: 10.1117/12.426840
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
The GaN-based multiple quantum wells (MQW) laser diodes have been improved excellently by introducing GaN/GaInN optical- guiding layers and by reducing dislocation density. The lifetime of continuous wave operation has been improved to longer than 300 hours with 3 mW at the wavelength of 409 nm.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masayoshi Koike, Sho Iwayama, Shiro Yamasaki, Yuta Tezen, Seiji Nagai, Akira Kojima, "GaN-based multiple quantum well light-emitting devices", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426840; https://doi.org/10.1117/12.426840
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