14 May 2001 High-brightness AlGaInP light-emitting diodes using surface texturing
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Abstract
There is a large number of new applications in lighting and display technology where high-brightness AlGaInP-LEDs can provide cost-efficient solutions for the red to yellow color range. Osram Opto Semiconductors has developed a new generation of MOVPE-grown AlInGaP-LEDs to meet these demands. Our structures use optimized epitaxial layer design, improved contact geometry and a new type of surface texturing. Based on this technology we achieve luminous efficiencies of more than 30 lm/W and wallplug efficiencies exceeding 10% of LEDs on absorbing GaAs substrates. The epitaxial structure does not require the growth of extremely thick window layer and standard processes are used for the chip fabrication. This allows for high production yields and cost-efficient production.
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Norbert Linder, Norbert Linder, Siegmar Kugler, Siegmar Kugler, Peter Stauss, Peter Stauss, Klaus P. Streubel, Klaus P. Streubel, Ralph Wirth, Ralph Wirth, Heribert Zull, Heribert Zull, } "High-brightness AlGaInP light-emitting diodes using surface texturing", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426852; https://doi.org/10.1117/12.426852
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