14 May 2001 High-power AlInGaN light-emitting diodes
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High-power light-emitting diodes (LEDs) in both the AlInGaP (red to amber) and the AlGaInN (blue-green) material systems are now commercially available. These high-power LEDs enable applications wherein high flux is necessary, opening up new markets that previously required a large number of conventional LEDs. Data are presented on high-power AlGaInN LEDs utilizing flip-chip device structures. The high-power flip-chip LED is contained in a package that provides high current and temperature operation, high reliability, and optimized radiation patterns. These LEDs produce record powers of 350 mW (1A dc, 300 K) with low (<4V) forward voltages. The performance of these LEDs is demonstrated in terms of output power, efficiency, and electrical characteristics.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jonathan J. Wierer, Jerome C. Bhat, Chien-Hua Chen, G. Christenson, Lou W. Cook, M. George Craford, Nathan F. Gardner, Werner K. Goetz, R. Scott Kern, Reena Khare, A. Kim, Michael R. Krames, Mike J. Ludowise, Richard Mann, Paul S. Martin, Mira Misra, J. O'Shea, Yu-Chen Shen, Frank M. Steranka, Steve A. Stockman, Sudhir G. Subramanya, S. L. Rudaz, Dan A. Steigerwald, Jingxi Yu, "High-power AlInGaN light-emitting diodes", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426841; https://doi.org/10.1117/12.426841


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