14 May 2001 High-power and single-mode DH InGaAsSb(Gd)/InAsSbP (λ=3.3 μm) diode lasers
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Abstract
Multimode pulse (P equals 1.56 W, I equals 9.5 A) and CW (P equals 160 mW, I equals 1 A) operation is reported at 77 K for the broad (w equals 200 micrometer) contact InGaAsSb(Gd)/InAsSbP diode lasers with (lambda) equals 3.0 divided by 3.3 micrometer. Narrow stripe lasers (w equals 20 micrometer) exhibited singlemode CW power as high as 18.7 and 9.3 mW at 77 and 100 K correspondingly. Single mode operation have been achieved in 70 divided by 140 micrometer long lasers with linewidth as narrow as 5 MHz, tuning rate as high as 210 cm-1/A and subsidiary mode suppression up to 650:1. Methane detection at 3028.75 cm-1 by wavelength modulation spectroscopy has been demonstrated.
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Boris A. Matveev, Meyrhan Aydaraliev, Nonna V. Zotova, Sergey A. Karandashev, Maxim A. Remennyi, Nikolai M. Stus', Georgii N. Talalakin, "High-power and single-mode DH InGaAsSb(Gd)/InAsSbP (λ=3.3 μm) diode lasers", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426833; https://doi.org/10.1117/12.426833
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