Paper
14 May 2001 III-V optically pumped mid-IR LEDs
Boris A. Matveev, Nonna V. Zotova, Sergey A. Karandashev, Maxim A. Remennyi, Nikolai M. Stus', Georgii N. Talalakin
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Abstract
InAs, InSb compounds and InAs(Sb)(P), In(Ga)As(Sb) based heterostructures grown onto InAs substrate have been used as a 'phosphor' for the optically pumped light emitting diodes emitting in the mid-IR spectral range (3 divided by 7 micrometer) at room and above room temperatures. The pulse output of the LEDs composed of GaAs pumping LED ((eta) ext equals 6 divided by 8%) and 2 divided by 20 micrometer thick mid-IR 'phosphor' joint together through a transparent 'glue' was as high as 40 divided by 500 (mu) W which is fairy close to the best reported values for 'cascade' and single quantum well diodes operating in a spontaneous mode.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris A. Matveev, Nonna V. Zotova, Sergey A. Karandashev, Maxim A. Remennyi, Nikolai M. Stus', and Georgii N. Talalakin "III-V optically pumped mid-IR LEDs", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); https://doi.org/10.1117/12.426851
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Cited by 10 scholarly publications.
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KEYWORDS
Light emitting diodes

Indium arsenide

Indium arsenide antimonide phosphide

Mid-IR

Gallium arsenide

Optical pumping

Absorption

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