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14 May 2001 Red and orange resonant-cavity LEDs
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Abstract
Usually resonant-cavity light-emitting diodes (RCLEDs) are used as emitters for plastic optical fiber communication. However, there are some arguments that may lead to the introduction of RCLEDs in a much wider range of applications. A typical high-brightness AlGaInP LED consists of a Bragg mirror, the active region and some layers for current spreading and light extraction. The thickness of these layers can add up to several ten microns which causes long epitaxial growth times. The total thickness of a RCLED can be significantly lower. Furthermore, since no lattice mismatched layers such as GaP are involved, the total incorporated strain is low which simplifies wafer handling and device processing. For this reason we studied RCLEDs with a dominant wavelength around 632 nm (superred) and 605 nm (orange). The processes for epitaxial growth and chip fabrication were optimized for homogeneity on 4 inch wafers and suitability for low-cost mass production, respectively. Possible applications for our RCLEDs are optical scanners, indicators, signal lights and other applications which benefit from the enhanced directionality of RCLEDs.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ralph Wirth, Christian Karnutsch, Siegmar Kugler, Simone Thaler, and Klaus P. Streubel "Red and orange resonant-cavity LEDs", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); https://doi.org/10.1117/12.426855
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