14 May 2001 Silicon as a substrate in multiwafer MOVPE GaN technology
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We report results on the transferability of a blue-green electroluminescence test structure (ELT) process across different reactor geometries and substrate materials. The process was transferred from the conditions of our well-known 6 X 2 inch to the 5 X 3 inch AIX 2400 G3 geometry by simple up-scaling of the respective process parameters in accordance with numerical simulations done on the reactor setup. The five period InGaN/GaN quantum well ELT structures with an average emission wavelength on wafer of 480 nm shows a standard deviation of 1 - 2% without rim exclusion. Electroluminescence up to 560 nm were achieved in InGaN/GaN structures with high In content. With these prospects new types of seed layers for the transfer of our standard electroluminescence test structures (ELT) process to Si- substrates were investigated. The growth on different seed layers was found feasible and resulted in operational ELT structures with emission wavelengths in the range of 440 nm to 470 nm. Electrical quick test shows bright blue emission across the full Si wafer.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Assadullah Alam, Bernd Schineller, Harry Protzmann, Markus Luenenbuerger, Michael Heuken, Michael D. Bremser, Egbert Woelk, Armin Dadgar, and Alois Krost "Silicon as a substrate in multiwafer MOVPE GaN technology", Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426846; https://doi.org/10.1117/12.426846

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