23 April 2001 Femtosecond spectroscopy in ZnO with tunable UV pulses
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Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001) https://doi.org/10.1117/12.424726
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
The hot carrier relaxation dynamics are studied in both intrinsic and n-type ZnO films grown on R-plane sapphire by metalorganic chemical vapor deposition. An ultrafast UV pump/UV probe experiment was used to study the relaxation process. Absorption saturation and band-gap renormalization are observed. A novel femtosecond pump-probe technique is also used in which the electrons present in n-type ZnO are excited by an infrared pump and the electron dynamics are monitored by a tunable near UV probe. Complex transients, showing bleaching and induced absorption, are observed. The results from those two samples are discussed.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hong Ye, Hong Ye, Philippe M. Fauchet, Philippe M. Fauchet, S. Mathukumar, S. Mathukumar, Yicheng Lu, Yicheng Lu, } "Femtosecond spectroscopy in ZnO with tunable UV pulses", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424726; https://doi.org/10.1117/12.424726
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