23 April 2001 Growth and optoelectronic properties of III-nitride quaternary alloys
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Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001) https://doi.org/10.1117/12.424740
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
InxAlyGa1-xN quaternary alloys with different In and Al composites were grown on sapphire substrates with GaN buffer by metal-organic chemical vapor deposition. Optical properties of these quaternary alloys were studied by picosecond time-resolved photoluminescence. Our studies have revealed that InxAlyGa1-xN quaternary alloys with lattice matched with GaN (y approximately 4.7x) have the highest optical quality. More importantly, we can achieve not only higher emission energies but also higher emission intensities (or quantum efficiencies) in InxAlyGa1-x-yN quaternary alloys than that of GaN.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing Li, Jing Li, Ki-Bum Nam, Ki-Bum Nam, KyoungHoon Kim, KyoungHoon Kim, Tom Nelson Oder, Tom Nelson Oder, H. J. Jun, H. J. Jun, Jing Yu Lin, Jing Yu Lin, Hongxing Jiang, Hongxing Jiang, } "Growth and optoelectronic properties of III-nitride quaternary alloys", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424740; https://doi.org/10.1117/12.424740


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