23 April 2001 Hot phonon effects on the ultrafast relaxation of photoexcited electrons in AlN
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Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001) https://doi.org/10.1117/12.424725
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
The effects of hot phonons on the ultrafast relaxation of photoexcited electrons in AlN has been investigated using ensemble Monte Carlo approach. The electrons are excited using infra-red laser pulses with different densities and energies. The build-up and decay of the hot phonon distribution at several phonon wavevectors is examined. The strong polar optical phonon scattering rates coupled with the short lifetimes of A(LO) leads to quick decay of the hot phonon distributions. Additionally, the rapid electron- electron scattering leads to fast thermalization of the carrier distributions.
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Mohamed A. Osman, "Hot phonon effects on the ultrafast relaxation of photoexcited electrons in AlN", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424725; https://doi.org/10.1117/12.424725
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