23 April 2001 Nonequilibrium electron distributions and energy loss rate inInx Ga1-xAs1-yNy studied by picosecond Raman spectroscopy
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Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001) https://doi.org/10.1117/12.424724
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Non-equilibrium electron distributions and energy loss rate in a MOCVD-grown InxGa1-xAs1-yNy (x equals 0.03 and y equals 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n approximately equals 1018 cm-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in InxGa1-xAs1-yNy is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.
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Y. Chen, Kong-Thon F. Tsen, "Nonequilibrium electron distributions and energy loss rate inInx Ga1-xAs1-yNy studied by picosecond Raman spectroscopy", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424724; https://doi.org/10.1117/12.424724
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