23 April 2001 Reflection second-harmonic generation from GaAs/AlAs and GaAs/AlGaAs multilayers
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Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001); doi: 10.1117/12.424738
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We have observed first-, second- and third-order quasi- phase-matched second-harmonic generation in the reflection geometry from GaAs/AlAs multilayers. We have measured phase- matching curves and identified all the peaks. The linewidth for the first order is limited only by wave-vector mismatch. We have demonstrated two-order-of-magnitude enhancement solely using quasi-phase-matched multilayers. We have also achieved cavity-enhanced quasi-phase-matched second-order and non-phase-matched second-harmonic generation from GaAs/Al0.8Ga0.2As multilayers. We have determined the element of the second-order susceptibility tensor used for quasi-phase matching. We have measured the conversion efficiencies and discussed possibilities for further enhancements.
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Xiaodong Mu, Yujie J. Ding, Haeyeon Yang, Gregory J. Salamo, "Reflection second-harmonic generation from GaAs/AlAs and GaAs/AlGaAs multilayers", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424738; https://doi.org/10.1117/12.424738
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KEYWORDS
Polarization

Second-harmonic generation

Gallium arsenide

Crystals

Laser crystals

Multilayers

Nonlinear crystals

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