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23 April 2001 Optical properties of electrodeposited CuInSe2-based thin film photoelectrochemical solar cells
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Polycrystalline thin films of CuInSe2 have been electrochemically deposited for different sodium citrate concentrations(20-80m Mole). Their optical properties in the near-UV-VIS, JR range, 200-1 l20nm, have been studied. An absorption coefficient (a) as high as 5*2*103 cm-1 is observed at wavelength ?<500 nm. The observed absorption coefficient variation is due to an allowed direct transition with an energy in the range 0.8-3.0eV. The direct valence to conduction band transition energies (Es) is determined from the absorption curves. It is calculated by extrapolating (?hv)2 versus (hv) to the photon energy axis intercept. From such estimations the band gap energy of as-grown film and annealed CuInSe2 films are found to be 1 .00 eV and 1 .04 eV respectively. The short circuit current ISc increases linearly and open circuit voltage V0 increases as a logarithmic function of light intensity. Peak of the spectral response lies at 620nm for 60m Mole sodium citrate annealed CuJnSe2 films. The as-grown film shows higher absorption coefficient than the annealed film.
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R. K. Pandey, Archana Mishra, Meera Ramrakhani, and B. P. Chandra "Optical properties of electrodeposited CuInSe2-based thin film photoelectrochemical solar cells", Proc. SPIE 4281, Combinatorial and Composition Spread Techniques in Materials and Device Development II, (23 April 2001);

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