27 April 2001 Controlling the quantum effects and erbium-carrier interaction using Si/SiO2 superlattices
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Proceedings Volume 4282, Rare-Earth-Doped Materials and Devices V; (2001) https://doi.org/10.1117/12.424770
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
The Er3+ luminescent properties of Er-doped Si/SiO2 superlattices are investigated. The superlattices were deposited either by electron cyclotron resonance plasma enhanced chemical vapor deposition or by ultra-high vacuum ion beam sputter deposition method and subsequently annealed at 950 degrees C. The thickness of the layers was varied 0.6 to 4.8 nm, and location of Er controlled within sub-nm. The structure and the composition of the films were confirmed using transmissions electron microscopy and medium energy ion spectroscopy. By carefully controlling the Si and SiO2 layer thickness and the locations of Er, we demonstrate several orders of magnitude enhancement of Er3+ luminescence and suppression of de-excitation mechanisms. We also demonstrate fabrication of waveguides using Er-doped Si/SiO2 superlattices, and discuss implications for possible applications.
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Jung H. Shin, Jung H. Shin, Ji-Hong Jhe, Ji-Hong Jhe, WonHee Lee, WonHee Lee, YongHo Ha, YongHo Ha, DaeWon Moon, DaeWon Moon, } "Controlling the quantum effects and erbium-carrier interaction using Si/SiO2 superlattices", Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); doi: 10.1117/12.424770; https://doi.org/10.1117/12.424770
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