27 April 2001 Erbium-activated silica-titania planar waveguides prepared by rf-sputtering
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Proceedings Volume 4282, Rare-Earth-Doped Materials and Devices V; (2001); doi: 10.1117/12.424788
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Erbium-activated silica-titania planar waveguides were prepared by rf-sputtering technique. The films were deposited both on v-SiO2 and silica-on-silica substrates obtained by plasma-enhanced chemical vapor deposition. The refractive index, the thickness and the total attenuation coefficient of the waveguides were measured by prism coupling technique. Scanning electron microscopy was used to analyze the morphology of both substrates and waveguiding film. Energy Dispersive Spectroscopy was performed in order to obtain a compositional analysis. Roughness measurements were carried out by means of a stylus profilometer. After thermal annealing at 600 degrees C for 6 hours the waveguides exhibited several well confined TE and TM propagating modes at 633 nm and one mode at 1550 nm. The attenuation coefficient at 1550 nm was 0.9 and 0.7 dB/cm for the films deposited on silica-on-silicon waveguide Raman spectroscopy. Waveguide luminescence spectroscopy was used to study the 4I13/2 yields 4I15/2 transition of Er3+ ion. The emission at 1530 nm was observed at room temperature upon continuous wave excitation at 514.2 nm. A lifetime of 3.7 ms for the metastable 4I13/2 level was measured.
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Sabina Ronchin, Alessandro Chiasera, Maurizio Montagna, Raffaella Rolli, Cristiana Tosello, Stefano Pelli, Giancarlo C. Righini, Rogeria Rocha Goncalves, Sidney J. L. Ribeiro, Carlo S. De Bernardi, Fabio Pozzi, Claire Duverger, Romina Belli, Maurizio Ferrari, "Erbium-activated silica-titania planar waveguides prepared by rf-sputtering", Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); doi: 10.1117/12.424788; https://doi.org/10.1117/12.424788
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KEYWORDS
Waveguides

Planar waveguides

Erbium

Refractive index

Luminescence

Ions

Light wave propagation

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