Growth, crystallization, and room temperature photoluminescence of Er2O3 thin films

Kevin M. Chen; Sajan Saini; Michal Lipson; Xiaoman Duan; Lionel C. Kimerling

doi:10.1117/12.424773

27 April 2001 Growth, crystallization, and room temperature photoluminescence of Er₂O₃ thin films

Kevin M. Chen, Sajan Saini, Michal Lipson, Xiaoman Duan, Lionel C. Kimerling

Author Affiliations +

Proceedings Volume 4282, Rare-Earth-Doped Materials and Devices V; (2001) https://doi.org/10.1117/12.424773
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Room temperature photoluminescence (RT PL) has been obtained from Er₂O₃ thin films fabricated via reactive sputtering of Er metal in Ar/O₂ and subsequently annealed. Upon annealing, the PL spectra develop maxima at 1549 nm and 1541 nm for films treated at 650 degrees C and 1020 degrees C, respectively. Crystallization at high temperature results in RT PL and a lifetime of approximately 10 ms at 4K.

Citation Download Citation

Kevin M. Chen, Sajan Saini, Michal Lipson, Xiaoman Duan, and Lionel C. Kimerling "Growth, crystallization, and room temperature photoluminescence of Er₂O₃ thin films", Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); https://doi.org/10.1117/12.424773

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