27 April 2001 Growth, crystallization, and room temperature photoluminescence of Er2O3 thin films
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Proceedings Volume 4282, Rare-Earth-Doped Materials and Devices V; (2001) https://doi.org/10.1117/12.424773
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Room temperature photoluminescence (RT PL) has been obtained from Er2O3 thin films fabricated via reactive sputtering of Er metal in Ar/O2 and subsequently annealed. Upon annealing, the PL spectra develop maxima at 1549 nm and 1541 nm for films treated at 650 degrees C and 1020 degrees C, respectively. Crystallization at high temperature results in RT PL and a lifetime of approximately 10 ms at 4K.
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Kevin M. Chen, Kevin M. Chen, Sajan Saini, Sajan Saini, Michal Lipson, Michal Lipson, Xiaoman Duan, Xiaoman Duan, Lionel C. Kimerling, Lionel C. Kimerling, } "Growth, crystallization, and room temperature photoluminescence of Er2O3 thin films", Proc. SPIE 4282, Rare-Earth-Doped Materials and Devices V, (27 April 2001); doi: 10.1117/12.424773; https://doi.org/10.1117/12.424773
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