9 July 2001 1.5-μm surface emission from GaInAsP/InP HELLISH structures
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432628
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Hot electron light emitting and lasing semiconductor heterostructure (HELLISH) is a novel longitudinal transport, surface emitting device. The operation of the device as a light emitter and vertical cavity surface emitting laser (VCSEL) has been previously demonstrated by us for the GaAs/GaAlAs material system. A basic GaInAsP/InP HELLISH structure and an advanced GaInAsP/InP HELLISH VCSEL structure are described in this work and designed for 1.5 micrometers emission. The basic HELLISH structure consists of a GaInAsP quantum well placed on the n-side of the InP p-n junction. The advanced structure has a similar active region to the basic HELLISH structure, but with a resonant cavity defined by the addition of DBRs, where the current is injected directly into the active region without having to pass through the DBRs. The modeling and design of these structures are described, including self-consisting numerical 1D solutions of the Poisson and Schrodinger equations.
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Russell Sceats, Russell Sceats, Carl J. Hepburn, Carl J. Hepburn, Richard J. Potter, Richard J. Potter, Angela Dyson, Angela Dyson, Naci Balkan, Naci Balkan, Michael J. Adams, Michael J. Adams, } "1.5-μm surface emission from GaInAsP/InP HELLISH structures", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432628; https://doi.org/10.1117/12.432628
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