Paper
9 July 2001 AlGaN/GaN MBE heterostructures: polarization effects and their implication on electronic properties
Angela Rizzi, R. Lantier, Martin Kocan, Dirk Doerner, Hans Lueth, Alessandra Catellani
Author Affiliations +
Abstract
The origin of the strong polarization fields in nitride heterostructures is discussed by comparing the symmetry properties of zincblende and wurtzite structures. Some peculiar effects in nitride heterostructure electronic properties, induced by the polarization fields are considered, like the determination of the valence band offset by x-ray photo emission spectroscopy (XPS) and the formation of 2D electron gases in AlGaN/GaN. The Fermi level position at MBE GaN, AlGaN and AlN surfaces has been measured in-situ by XPS. The role played by surface states has been emphasized, experimentally and through self consistent calculations.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Angela Rizzi, R. Lantier, Martin Kocan, Dirk Doerner, Hans Lueth, and Alessandra Catellani "AlGaN/GaN MBE heterostructures: polarization effects and their implication on electronic properties", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432554
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Heterojunctions

Polarization

Crystals

Aluminum

Dielectric polarization

Gallium nitride

Aluminum nitride

RELATED CONTENT


Back to Top