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9 July 2001 Analysis of vector LP modes in VCSELs using the effective frequency method
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432557
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
The effective frequency method (EFM) is generalized to the case of vector analysis of LP modes in VCSELs and applied to proton-implanted and oxide-confined VCSEL structures. Resonant wavelengths and mode profiles of a number of vector LP modes are calculated for different values of active region radius. The vector EFM is shown to provide important information about the vertical and radial components of the energy flux inside the laser structure. The maximum values for 'weak' Ez and 'strong' Ex components of the electrical field within the laser structure are calculated. Their intensity ratio in the 'near-cutoff' situation is suggested as a quantitative verification of weak-guiding assumption in VCSELs, on which the derivation of the EFM was based.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gennady A. Smolyakov, Petr Georgievich Eliseev, and Marek Osinski "Analysis of vector LP modes in VCSELs using the effective frequency method", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432557
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