9 July 2001 Characteristics of laser diodes influenced by electron-dominant nonuniform carrier distribution
Author Affiliations +
Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432620
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Electron-determined nonuniform carrier distribution inside multiple quantum wells (MQW) is experimentally discovered. Two groups of mirror-imaged nonidentical quantum well InGaAsP/InP lasers diodes are designed, fabricated, and measured. Measured characteristics of both groups show that electron, instead of hole, is the dominant carrier affecting carrier distribution. Carrier transport effects including carrier diffusion/drift and capture/emission processes inside MQW are described to explain the nonuniform carrier distribution. The reason for the electron dominated carrier distribution is because electron takes less time to be capture into QW 2D states than hole does. The sequence of the nonidentical QWS is also shown to have significant influence on device characteristics.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bing-Ruey Wu, Bing-Ruey Wu, Ching-Fuh Lin, Ching-Fuh Lin, Lih-Wen Laih, Lih-Wen Laih, Tien-Tsorng Shih, Tien-Tsorng Shih, "Characteristics of laser diodes influenced by electron-dominant nonuniform carrier distribution", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432620; https://doi.org/10.1117/12.432620
PROCEEDINGS
11 PAGES


SHARE
Back to Top