9 July 2001 Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432555
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Using 6H-SiC(0001) and (gamma) -LiAlO2(100) substrates, identically designed GaN/(Al,Ga)N heterostructures with (C- plane)- and (M-plane)-orientation, respectively, are grown by plasma-assisted molecular beam epitaxy. The latter case is of special interest, because such structures with the hetero-interface parallel to the hexagonal c-axis are free of electrostatic fields. This fact leads to distinct differences in the spontaneous emission. While the photoluminescence from the conventional oriented wells is unpolarized, a strong polarization anisotropy of over 90 percent is observed for the M-plane sample. The data are in excellent agreement with the expectations from the known valence band structure of wurzite GaN, taking into account a confinement induced admixture of the different subvalence bands in the M-plane quantum well. Secondly, a distinctly enhanced recombination rate in the electrostatic-field free M-plane sample with respect to the C-plane MQW is seen in time-resolved photoluminescence studies proving the increased electron-hole overlap in the M-plane case. Photoluminescence studies at high excitation densities are carried out to uncover the physical gain mechanism for both kinds of heterostructures.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bjoern Rau, Bjoern Rau, P. Waltereit, P. Waltereit, Oliver Brandt, Oliver Brandt, A. Trampert, A. Trampert, Klaus H. Ploog, Klaus H. Ploog, Joachim Puls, Joachim Puls, Fritz Henneberger, Fritz Henneberger, "Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432555; https://doi.org/10.1117/12.432555
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