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9 July 2001 Experimental characterization and analysis of the static behavior of twin-ridge AlGaInAs laterally coupled lasers (LCDL)
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432579
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Laterally coupled diode lasers emitting at 1.3 um are presented. Devices were fabricated with distances between ridges varying from 2.76 um to 8.32 um. Electronic coupling effects are investigated by individually varying the currents in each ridge while monitoring output power. It is observed that for devices with 8.32 um separation between ridges there is minimal current sharing, whereas for 2.76 um separation there is considerable current sharing. Optical coupling is measured via the far-field, where most devices show out-of-phase locking, although in-phase locking is observed in a minority of cases. Devices therefore show conditions necessary for the observation of high speed dynamics.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brendan J. Roycroft, Pekko Sipilae, Petri Melanen, Pekka Savolainen, Markus Pessa, Manuel Leones, Sara Perez, Guillermo Carpintero, and Horacio Lamela "Experimental characterization and analysis of the static behavior of twin-ridge AlGaInAs laterally coupled lasers (LCDL)", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432579
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