9 July 2001 Influence of the design parameters in the spatiotemporal dynamics of two InGaAsP laterally coupled semiconductor lasers
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432627
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
This paper presents a work on spatiotemporal behavior and study of design parameters for two laterally coupled semiconductor diode lasers. The structures to be studied are Two Laterally Coupled semiconductor diode Lasers (TLCL) to 1,3um and they are expected to increase the modulation bandwidth to two or three times the modulation bandwidth for a single semiconductor laser, by using the principles of coupling between emitters. We show a study of the modeling used to find the spatiotemporal behavior of these devices when we change some design parameters, which are very important if we want to obtain a high-speed modulation control by current injection, because these devices can present unstable dynamics depending on coupling level. Temporal evolution of the Near-field, Far-field, photon and carrier densities and the phase between the fields inside the two lasers are used to study the dynamic behavior of the TLCL when we change parameters as the distance between emitters, carrier diffusion, current spreading and the level of injected current.
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Horacio Lamela, Manuel Leones, Ortwin G. Hess, "Influence of the design parameters in the spatiotemporal dynamics of two InGaAsP laterally coupled semiconductor lasers", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432627; https://doi.org/10.1117/12.432627
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