9 July 2001 Microscopic modeling of GalnNAs semiconductor lasers
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432581
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We calculate microscopically the gain and absorption, linewidth enhancement factor and carrier capture times for a GaInNAs/GaAs quantum-well laser operating in the 1.3 micrometers wavelength regime. The results are compared to those for an InGaAsP/InP and an InGaAlAs/InP structure with similar fundamental transition energies. The much higher confinement for carriers in the GaInNAs quantum well is shown to lead to larger gain bandwidths and, for low to moderate carrier densities, to lower linewidth enhancement factors than for the later two material systems. On the other hand, the high depth of the wells leads to longer carrier capture times in GaInNAs/GaAs.
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Joerg Hader, Joerg Hader, Jerome V. Moloney, Jerome V. Moloney, Eoin P. O'Reilly, Eoin P. O'Reilly, Martin R. Hofmann, Martin R. Hofmann, Stephan W. Koch, Stephan W. Koch, } "Microscopic modeling of GalnNAs semiconductor lasers", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432581; https://doi.org/10.1117/12.432581
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