9 July 2001 Modeling GaInAs/GaAsSb type-II superlattices grown on InP for optoelectronic applications
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432561
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
We present a microscopic model of emission in a series of strain-compensated GaInAs/GaAsSb type-II superlattice structures with infrared applications. The need for an improved understanding of the optoelectronic characteristics of these systems, both in terms of basic physics and technological applications, is identified. The band lineup in heterostructures containing alloys is frequently determined using the Model Solid theory with linear interpolation of input parameters between those of the constituent compounds. However, for the present superlattices, this approach did not provide a description of the band lineups which was consistent with experimental data. Band lineups were subsequently fitted to achieve spectral cutoff measurements, and we found that these offsets were in better agreement with experimental data than those predicted using the above method. On using these lineups as input to our empirical pseudopotential model, lineshapes exhibiting good agreement with experiment were computed. We analyze the role played by wave-function confinement in determining spectral features and investigate the potentially degrading effects of Auger recombination on device performance. The results of this study advance the characterization of these systems, indicating links between their microscopic properties and optical spectra.
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Matt R. Kitchin, Matt R. Kitchin, Mike J. Shaw, Mike J. Shaw, Elizabeth A. Corbin, Elizabeth A. Corbin, Jerry P. Hagon, Jerry P. Hagon, Milan Jaros, Milan Jaros, } "Modeling GaInAs/GaAsSb type-II superlattices grown on InP for optoelectronic applications", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432561; https://doi.org/10.1117/12.432561

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