9 July 2001 New approach for tunable quantum well wire lasers
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432621
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
A new approach for operation of tunable lasers based on quantum well wires is proposed. The laser operation uses the effect of an intense, long-wavelength laser field radiation applied to the semiconductor device. Different geometry's concerning the shape and size of the semiconductor quantum structure as well as the orientation of the applied laser field with respect to the quantum device was considered. We calculate the laser-dressed quantum well wire (QWW) potential energy, in the frame of the nonperturbative theory and finite difference method. Then, we show that when the intense, long-wavelength laser field radiation, is applied to the semiconductor-based quantum well wire device a significant optical Stark effect is observed for the bound state energy. Furthermore, under the action of the laser-dressed potential, a strong enhancement of the blue shift occurs for the electron-heavy hole recombination processes as the QWW lateral size is reduced. This effect may provide full control of the frequency operation of QWW-based lasers and thus would be of great help in tailoring the physical parameters of the semiconductor QWW device.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fanyao Qu, Fanyao Qu, N. O. Dantas, N. O. Dantas, P. C. Morais, P. C. Morais, "New approach for tunable quantum well wire lasers", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432621; https://doi.org/10.1117/12.432621

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