9 July 2001 Nonradiative recombination and efficiency of InGaN quantum well light-emitting diodes
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001); doi: 10.1117/12.432626
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
The electroluminescence efficiency of InGaN LEDs is surprisingly high for structures which have high defect concentrations due to growth on mismatched substrates. We have measured the high-injection non-radiative lifetime in InGaN LEDs by analysis of the light current characteristics. We find that the values of (tau) nr decrease from 18ns at 200K to 5ns at 400K. This behavior is thermally activated with an activation energy of 40 meV which is compatible with the hypothesis that the temperature dependence is due to thermal delocalization of carriers form potential minima caused by modest fluctuations in In composition in the quantum well. We determine the internal quantum efficiency to lie between 52 percent and 65 percent at room temperature over the current range employed.
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G. B. Ren, Huw D. Summers, Peter Blood, Richard Perks, David P. Bour, "Nonradiative recombination and efficiency of InGaN quantum well light-emitting diodes", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432626; https://doi.org/10.1117/12.432626
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KEYWORDS
Indium gallium nitride

Light emitting diodes

Quantum wells

Temperature metrology

Gallium nitride

Quantum efficiency

Internal quantum efficiency

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