Novel RiS-type InGaN MQW laser diodes on FIELO GaN substrates

Masaru Kuramoto; Akitaka Kimura; Chiaki Sasaoka; Takahiro Arakida; Masaaki Nido; Masashi Mizuta

doi:10.1117/12.432599

9 July 2001 Novel RiS-type InGaN MQW laser diodes on FIELO GaN substrates

Masaru Kuramoto, Akitaka Kimura, Chiaki Sasaoka, Takahiro Arakida, Masaaki Nido, Masashi Mizuta

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432599
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

A novel ridge structure fabricated by selective-area epitaxial growth is proposed for InGaN MQW laser diodes (LDS). This technique is capable of precisely controlling the active ridge width and height, thus enabling stable single transverse-mode operation. Together with a backside n-contact on a low-dislocation-density GaN substrate, this structure provides high productivity and performance for GaN-based blue-violet LDs. The LDs fabricated by this technique have achieved continuous-wave operation at more than 30 mW up to a temperature of 90 degrees C, with a characteristic temperature T₀ of 105 K from 20 to 90 degrees C. The laser design and characteristics are discussed in detail.

Citation Download Citation

Masaru Kuramoto, Akitaka Kimura, Chiaki Sasaoka, Takahiro Arakida, Masaaki Nido, and Masashi Mizuta "Novel RiS-type InGaN MQW laser diodes on FIELO GaN substrates", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432599

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