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9 July 2001 Optical characterization of GaInNAs
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001)
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
We report on experimental characterization of GaInNAs and GaInAs semiconductor materials grown on GaAs by Chemical Beam Epitaxy. The optical characterization of the samples has been carried out by orthodox photoluminescence and ellipsometry measurements. We show that even a small amount of nitrogen added to GaInAs has a considerable effect on the optical properties, causing a red shift in the emission wavelength, a reduction in PL efficiency and an increase in the refractive index.
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Richard J. Potter, Simone Mazzucato, Naci Balkan, Michael J. Adams, Paul R. Chalker, Tim B. Joyce, and Tim J. Bullough "Optical characterization of GaInNAs", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001);

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