9 July 2001 Optical characterization of GaInNAs
Author Affiliations +
Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432617
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We report on experimental characterization of GaInNAs and GaInAs semiconductor materials grown on GaAs by Chemical Beam Epitaxy. The optical characterization of the samples has been carried out by orthodox photoluminescence and ellipsometry measurements. We show that even a small amount of nitrogen added to GaInAs has a considerable effect on the optical properties, causing a red shift in the emission wavelength, a reduction in PL efficiency and an increase in the refractive index.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard J. Potter, Richard J. Potter, Simone Mazzucato, Simone Mazzucato, Naci Balkan, Naci Balkan, Michael J. Adams, Michael J. Adams, Paul R. Chalker, Paul R. Chalker, Tim B. Joyce, Tim B. Joyce, Tim J. Bullough, Tim J. Bullough, } "Optical characterization of GaInNAs", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432617; https://doi.org/10.1117/12.432617
PROCEEDINGS
7 PAGES


SHARE
Back to Top