9 July 2001 Optimization of the barrier height in 1.3-μm InGaAsP multiple-quantum-well active regions for high-temperature operation
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432569
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We present a study of barrier height effects on the high-temperature performance of 1.3 micron strained layer InGaAsP/InP quantum well lasers. Broad-area Fabry-Perot lasers were fabricated and their light-current characteristics were measured at temperatures between 20 degrees C and 80 degrees C. Based on our experimental results we analyze the effect of the barrier bandgap using the commercial laser simulation software LASTIP. The simulator calculates all relevant physical mechanisms, including their dependence on temperature and local carrier density, self-consistently. The strained quantum-well optical gain computation is based on the 4 x 4 kp method considering valence-band mixing effects. A drift-diffusion model including thermionic emission at hetero-interfaces is used for the calculation of the carrier transport. Careful adjustments of material parameters, in agreement with data reported in the literature, are performed in order to reproduce the measurements. Lowering the barrier height in the active region leads to an improved performance of our laser with respect to threshold current and slope efficiency. An optimum barrier bandgap range of 1.21 - 1.24 eV is identified for our laser. This is partially attributed to the non-uniform carrier-distribution across the quantum-wells.
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Sebastian Mogg, Joachim Piprek, "Optimization of the barrier height in 1.3-μm InGaAsP multiple-quantum-well active regions for high-temperature operation", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432569; https://doi.org/10.1117/12.432569
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