9 July 2001 Sharply bent optical waveguide silicon-on-insulator substrate
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432614
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
We fabricated optical waveguides with a relative refractive index difference of maximally 45 percent on a silicon-on-insulator (SOI) substrate. We designed the Si channel using the finite difference time domain simulation and fabricated using electron beam lithography and inductively coupled plasma etching. The single or quasi-single mode propagation was observed for channel width of 0.3 - 1.0 microns and thickness of 0.32 microns at a wavelength of 1.55 microns. Propagation loss evaluated using the Fabry-Perot resonance method was of 10 inverse cm order for these channel widths. The large effective index of the guided mode over 4.5 was also observed, which well agreed with the simulation. When channel width was 0.5 microns, the bend loss of 0 - 1 dB was roughly evaluated even though the bend radius was 0.5 - 9.5 microns. The similar low loss was also confirmed for half circular disk waveguides butt-joined to use as 90-degree-bends. These results suggest the potential of an ultra-high density optical wiring in lightwave circuits.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Atsushi Sakai, Atsushi Sakai, Hara Go, Hara Go, Toshihiko Baba, Toshihiko Baba, } "Sharply bent optical waveguide silicon-on-insulator substrate", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432614; https://doi.org/10.1117/12.432614

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