9 July 2001 Temperature dependence of threshold current: a better criterion than T0?
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432571
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Experimental measurements of threshold current density as a function of temperature have been analyzed in terms of the characteristic temperature, T0, and temperature gradient (Delta) TJth equals (delta) Jth/(delta) T, for a number of semiconductor laser device structures. These include AlInGaAs/InP, InGaAsP/InP, and AlGaAs/GaAs. A theoretical model is used to investigate the possible loss mechanisms in laser diodes that cause the superlinear increase of threshold current with temperature. The characteristic temperature T0 is found to vary with temperature and device length, thus making it somewhat misleading when quoted without qualification. A different approach based on plotting ln((Delta) TJth) vs. ln(Jth) shows a linear relationship that is dependent on device structure only, allowing the use of a new figure of merit for the temperature performance of semiconductor lasers.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tim J. Houle, Alexander I. Onischenko, Judy M. Rorison, Richard V. Penty, Ian H. White, Anthony J. SpringThorpe, J. Kenton White, Paul Paddon, and T. Garanzotis "Temperature dependence of threshold current: a better criterion than T0?", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432571; https://doi.org/10.1117/12.432571
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