9 July 2001 Theoretical analysis of polarization sensitivity of strained bulk SOAs
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Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432589
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
The polarization dependence of 1550-nm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k.p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takaaki Kakitsuka, Takaaki Kakitsuka, Yasuo Shibata, Yasuo Shibata, Masayuki Itoh, Masayuki Itoh, Yuichi Tohmori, Yuichi Tohmori, Yuzo Yoshikuni, Yuzo Yoshikuni, } "Theoretical analysis of polarization sensitivity of strained bulk SOAs", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432589; https://doi.org/10.1117/12.432589
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