Translator Disclaimer
9 July 2001 Transverse-mode control in GaN-based laser diodes
Author Affiliations +
Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001)
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Transverse mode in GaN-based violet laser diodes for both vertical and horizontal directions was investigated. In order to achieve stable fundamental mode operation in vertical direction, thick AlGaN contact layer is found to be effective. For the stabilization of a transverse-mode in horizontal direction of the conventional ridge-waveguide structure, it is necessary to precisely control the remaining thickness of p-AlGaN cladding layer. In comparison, inner stripe structure using AlGaN current blocking layer has wide feasibility of the device parameter, excellent stability of large optical confinement, and small aspect ratio of beam divergence, under the condition of the precise control of the AlN molar fraction in AlGaN current blocking layer.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Amano, Satoshi Kamiyama, T. Detchprohm, Toshiyuki Sato, Motoaki Iwaya, Shugo Nitta, Shinji Terao, and Isamu Akasaki "Transverse-mode control in GaN-based laser diodes", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001);


Plasmonic cladding InGaN MQW laser diodes
Proceedings of SPIE (February 16 2011)
Nonlinearity Effects In Crystal Cored Fibres
Proceedings of SPIE (June 02 1988)
Characteristics of CW violet laser diodes grown by MBE
Proceedings of SPIE (February 22 2006)
Highly doped GaN a material for plasmonic claddings for...
Proceedings of SPIE (February 27 2012)

Back to Top