17 May 2001 Negative luminescence from InAsSbP-based diodes in the 4.0- to 4.3-μm range
Author Affiliations +
Proceedings Volume 4285, Testing, Reliability, and Applications of Optoelectronic Devices; (2001) https://doi.org/10.1117/12.426876
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Negative luminescence (NL) operation at ∼4 µm for p-InAsSbP/n-InAs and 4÷5 µm for p-InAsSb/n-InAsSb(P) diodes with FWHM∼0.1⋅λmax is reported for a reverse bias operation mode. NL output at 180oC is as high as 3÷5 µW and negative apparent temperature contrast is as strong as ∆T= - (6÷10°C) which show advantages of InAs and InAsSb based NL devices for high temperature applications. The remarkable feature is the uniformity of spatial NL output distribution, which is a confirmation of the existence of a potential barrier in narrow band p-n junction at elevated temperatures.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris A. Matveev, Boris A. Matveev, Meyrhan Aydaraliev, Meyrhan Aydaraliev, Nonna V. Zotova, Nonna V. Zotova, Sergey A. Karandashev, Sergey A. Karandashev, Maxim A. Remennyi, Maxim A. Remennyi, Nikolai M. Stus', Nikolai M. Stus', Georgii N. Talalakin, Georgii N. Talalakin, Volodymyr K. Malyutenko, Volodymyr K. Malyutenko, Oleg Yu. Malyutenko, Oleg Yu. Malyutenko, "Negative luminescence from InAsSbP-based diodes in the 4.0- to 4.3-μm range", Proc. SPIE 4285, Testing, Reliability, and Applications of Optoelectronic Devices, (17 May 2001); doi: 10.1117/12.426876; https://doi.org/10.1117/12.426876
PROCEEDINGS
9 PAGES


SHARE
Back to Top