Sensitive nonintrusive sensing by modulation spectroscopy with diode lasers

Audra Michelle Bullock; James M. Barrington; Amin N. Dharamsi

doi:10.1117/12.426899

17 May 2001 Sensitive nonintrusive sensing by modulation spectroscopy with diode lasers

Audra Michelle Bullock, James M. Barrington, Amin N. Dharamsi

Proceedings Volume 4285, Testing, Reliability, and Applications of Optoelectronic Devices; (2001) https://doi.org/10.1117/12.426899
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Recent developments in the use of diode lasers as ultra sensitive sensors are presented. Particular emphasis is placed on higher harmonic detection using the wavelength modulation technique. Experimental results are presented illustrating that this method, which uses a compact, portable apparatus, yields measurements with very high precision. Theoretical analyses of these experimental results are also provided. Novel ways of extracting detailed information of the probed sample are described. These include measurements of fine features, as well as simultaneous measurements of multiple overlapping lines. Such fine features allow one to accurately probe the collision dynamics of gaseous samples yielding values of temperature, density, and pressure. The method described here utilizes several novel features of higher harmonic detection. These features include a set of self-consistent measurements, by employing coherent detection up to the eighth harmonic order. The highest harmonic detection order achievable with this technique is limited by the bandwidth of the synchronous phase-sensitive demodulation apparatus and the noise figure for the detection system. Applications in basic science, in pollution monitoring and detection, and in industrial environments are briefly discussed.

Citation Download Citation

Audra Michelle Bullock, James M. Barrington, and Amin N. Dharamsi "Sensitive nonintrusive sensing by modulation spectroscopy with diode lasers", Proc. SPIE 4285, Testing, Reliability, and Applications of Optoelectronic Devices, (17 May 2001); https://doi.org/10.1117/12.426899

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