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17 May 2001 Thermal failure model and reliability tests of solar cells
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Proceedings Volume 4285, Testing, Reliability, and Applications of Optoelectronic Devices; (2001) https://doi.org/10.1117/12.426893
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
Within silicon silver is an impurity with fast diffusivity and deep levels. It forms effective recombination centers in silicon acting as either acceptor or donor levels. That has been confirmed by a depth profile analysis with the SIMS. The silver atoms do exist near the barrier region of a solar cell with Ti/Pd/Ag electrodes heated at 245 degrees Celsius for 308 hours. The open circuit voltage at low injection decreases as recombination actions increase in the barrier region. According to these phenomena, an estimation for the lifetime of solar cells is given by using acceleration tress tests based on Arrhenius equation.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiankun Xin and Guang Ci Cao "Thermal failure model and reliability tests of solar cells", Proc. SPIE 4285, Testing, Reliability, and Applications of Optoelectronic Devices, (17 May 2001); https://doi.org/10.1117/12.426893
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