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4 May 2001 Continuous-wave vertical-cavity surface-emitting lasers with emission wavelengths near 650 nm
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Proceedings Volume 4286, Vertical-Cavity Surface-Emitting Lasers V; (2001)
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Red VCSELs for emission wavelengths near 650nm find applications in emerging technologies such as plastic-fiber-based data communication. However, these devices are challenging due to low band offsets and high electrical and thermal resistivity of especially the p-DBR. The paper presents the optimization of p-DBR and QW design for the reduction of the series resistance and the threshold current density. VCSEL structures were grown using MOVPE and processed to air-post mesas. The resistance of the p:DBR mirrors was optimized using different dopants and interfaces. By changing from Zn doping and abrupt interfaces to the dopant C and introducing graded interfaces the differential resistance decreased. Due to a relative shift across the wafer between the DBR stop-band and gain peak wavelength defined by the MQW active region, devices are available with lasing wavelengths between 638nm and 662nm in pulsed-mode operation. Threshold current densities of 3.6kA/cm2 at 650nm are measured. For improving device parameters a current aperture was processed by selective wet oxidation of AlxGa1-xAs with varying x. Cw laser operation is achieved for wavelengths between 644nm and 657nm at 10°C ambient temperature. With threshold currents under 4mA maximum cw output powers of 160µW are obtained at wavelengths of 657nm and 650 nm.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrea Oster, M. Zorn, Klaus Vogel, Jorg Fricke, Juergen Sebastian, W. John, Marcus Weyers, and Guenther Traenkle "Continuous-wave vertical-cavity surface-emitting lasers with emission wavelengths near 650 nm", Proc. SPIE 4286, Vertical-Cavity Surface-Emitting Lasers V, (4 May 2001);


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