4 May 2001 High-speed VCSELs for next-generation telecommunications links
Author Affiliations +
Proceedings Volume 4286, Vertical-Cavity Surface-Emitting Lasers V; (2001) https://doi.org/10.1117/12.424793
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
High bit rate communication links are placing increasing demands on the performance and cost of semiconductor laser diodes. VCSELs are uniquely suited to meeting the requirements of 10 Gb/s and higher applications. The laser requirements include high temperature operation, high bandwidth, high reliability, short rise and fall times, low RIN, low jitter, low RMS linewidth, and drive circuit compatibility. We will discuss the major challenges to achieving these goals as well as approaches that have been successful to date.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John G. Wasserbauer, John G. Wasserbauer, James G. Beltran, James G. Beltran, J. E. Bisberg, J. E. Bisberg, Leo M. F. Chirovsky, Leo M. F. Chirovsky, David Galt, David Galt, T. Hudson, T. Hudson, Andrew W. Jackson, Andrew W. Jackson, David W. Kisker, David W. Kisker, Michael D. Lange, Michael D. Lange, Ryan L. Naone, Ryan L. Naone, Simon R. Prakash, Simon R. Prakash, Larry R. Thompson, Larry R. Thompson, } "High-speed VCSELs for next-generation telecommunications links", Proc. SPIE 4286, Vertical-Cavity Surface-Emitting Lasers V, (4 May 2001); doi: 10.1117/12.424793; https://doi.org/10.1117/12.424793


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