4 May 2001 Linewidth evaluation in VCSELs
Author Affiliations +
Proceedings Volume 4286, Vertical-Cavity Surface-Emitting Lasers V; (2001) https://doi.org/10.1117/12.424810
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We present a model to compute the linewidth in vertical-cavity surface-emitting lasers, accounting for the 3D-structure of real devices. To this aim we include the noise source in the field equations and treat both the noise and the structural characteristics by means of coupled mode theory. In this way we obtain an expression for the linewidth that is given as the standard relation, modified by two correction factors that account for spatial effects and modal dispersion of the resonator. In the numerical results we give some guidelines towards devices aimed to narrow-line emission and, as a significant example, we study the transition from gain to index-guided devices in oxide-confined VCSEL's.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierluigi De Bernardis, Pierluigi De Bernardis, Gian Paolo Bava, Gian Paolo Bava, Laura Fratta, Laura Fratta, "Linewidth evaluation in VCSELs", Proc. SPIE 4286, Vertical-Cavity Surface-Emitting Lasers V, (4 May 2001); doi: 10.1117/12.424810; https://doi.org/10.1117/12.424810
PROCEEDINGS
12 PAGES


SHARE
Back to Top