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4 May 2001 Optimization strategies for diode cascade InGaAs VCSELs
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Proceedings Volume 4286, Vertical-Cavity Surface-Emitting Lasers V; (2001) https://doi.org/10.1117/12.424795
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
We present top surface emitting two- and three-stage bipolar cascade vertical cavity surface emitting lasers (VCSELs) for continuous wave (cw) operation at room temperature. The results are compared with a conventional VCSEL grown under identical growth conditions for reference. The improvement of both threshold current density and differential quantum efficiency can be clearly shown in structures with unchanged top mirror reflectivities (19 pairs). To further increase the differential quantum efficiency, a device with only 14 p-type top mirror pairs is fabricated, yielding an efficiency of 130% for cw room temperature operation. From noise measurements, we extract a modulation efficiency of 8.2 GHz/sqrt(mA}, indicating favorable dynamic properties of these VCSEL.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthias Golling, T. Knoedl, Axel Straub, Max Kicherer, and Karl Joachim Ebeling "Optimization strategies for diode cascade InGaAs VCSELs", Proc. SPIE 4286, Vertical-Cavity Surface-Emitting Lasers V, (4 May 2001); https://doi.org/10.1117/12.424795
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