4 May 2001 Quest for very high speed VCSELs: pitfalls and clues
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Proceedings Volume 4286, Vertical-Cavity Surface-Emitting Lasers V; (2001) https://doi.org/10.1117/12.424792
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
We present an approach for systematic high-speed characterization of VCSELs and discuss both its potential benefits and problems. We show how the VCSEL dynamics, under certain conditions, can be well described by a small number of key parameters that can be extracted from measurements and used for further optimization. The calibrated small signal modulation responses of the laser are measured and fitted to an analytical transfer function allowing the estimation of the resonance frequency, damping factor and parasitic cut-off at different bias points. From this data the relative importance of different bandwidth limiting effects due to damping, thermal heating and parasitics can be deducted. We illustrate the approach on 850nm datacom VCSELs using either ion implantation, selective oxidation or semi-insulating regrowth for current confinement. The bandwidth ofthe implanted device appears to be limited by parasitics effects to 3.3GHz. Due to a much smaller injection diameter, the oxidized VCSEL reaches 10GHz, being mainly limited by the high damping. Finally the regrown VCSEL operates up to 5GHz, limited by the parasitics
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Renaud Stevens, Renaud Stevens, Richard Schatz, Richard Schatz, Anita Lovqvist, Anita Lovqvist, Thomas Aggerstam, Thomas Aggerstam, Christina Carlsson, Christina Carlsson, Carlos Angulo Barrios, Carlos Angulo Barrios, Sebastian Lourdudoss, Sebastian Lourdudoss, Marco Ghisoni, Marco Ghisoni, } "Quest for very high speed VCSELs: pitfalls and clues", Proc. SPIE 4286, Vertical-Cavity Surface-Emitting Lasers V, (4 May 2001); doi: 10.1117/12.424792; https://doi.org/10.1117/12.424792

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