4 May 2001 Selectively oxidized vertical-cavity surface-emitting lasers for high-speed data communication
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Proceedings Volume 4286, Vertical-Cavity Surface-Emitting Lasers V; (2001) https://doi.org/10.1117/12.424794
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States
Abstract
MITEL Semiconductor is developing the next generation low cost, high performance transceivers for data communication. The increasing quantity of data being transferred over the Internet demands very high capacity interconnects. A low cost, high-performance alternative is the use of parallel fiber interconnects where the light is, for example, coupled into a 12channel fiber-ribbon. Parallel interconnects require good uniformity in order to reduce escalating costs and complexity. In this paper we report on the static and the modulation properties of 850nm multimode oxide VCSELs for use in such Gb/s transceiver system. Static power-current-voltage characteristics with good uniformity were obtained for different structures, with threshold currents down to sub-mA. A maximum small signal 3-dB bandwidth of 10 GHz and a modulation current efficiency up to 8.4 GHztsJ[rnA] were measured. Single channel results are presented for VCSELs operated at data rates from 2.5-10Gb/s.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Aggerstam, Thomas Aggerstam, Anita Loevqvist, Anita Loevqvist, Renaud Stevens, Renaud Stevens, Stefan Jonsson, Stefan Jonsson, Rickard M. von Wuertemberg, Rickard M. von Wuertemberg, Richard Schatz, Richard Schatz, Mardjan Dubois, Mardjan Dubois, Marco Ghisoni, Marco Ghisoni, } "Selectively oxidized vertical-cavity surface-emitting lasers for high-speed data communication", Proc. SPIE 4286, Vertical-Cavity Surface-Emitting Lasers V, (4 May 2001); doi: 10.1117/12.424794; https://doi.org/10.1117/12.424794
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