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Enhanced-performance operation of InGaN MQW lasers with air/nitride-distributed Bragg reflector defined by focused ion beam etching
High reliability and facet temperature reduction in high-power 0.8-μm Al-free active-region diode lasers
Bandwidth narrowing of a diode laser array by beam injection using photorefractive double phase conjugation
MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers
Carrier confinement in strain-compensated InGaAs/GaAsP quantum well laser with temperature-insensitive threshold